Semiconductor Device Structure and Method for Forming the Same

A device comprising:

• a semiconductor substrate;
• a gate stack over the semiconductor substrate, wherein the gate stack comprises:
• a gate electrode;
• and
• a first hydrogen-containing portion in the gate electrode;
• one or more gate spacers adjacent the gate stack and comprising a second hydrogen-containing portion, wherein the second hydrogen-containing portion extends above the first hydrogen-containing portion;
• and
• an insulating cap layer over the gate electrode, wherein the first hydrogen-containing portion is disposed around a first portion of the insulating cap layer, and wherein the second hydrogen-containing portion is disposed around a second portion of the insulating cap layer.

A device comprising:

• a semiconductor substrate;
• a first gate electrode over the semiconductor substrate, wherein the first gate electrode comprises a first hydrogen-containing portion;
• a first insulating cap layer on the first gate electrode;
• a second gate electrode over the semiconductor substrate, wherein the second gate electrode comprises a second hydrogen-containing portion, and wherein a top surface of the first gate electrode has a different profile than a top surface of the second gate electrode;
• and
• a second insulating cap layer on the second gate electrode.