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US 2017/0256635 A1Published application
Nitride semiconductor and nitride semiconductor manufacturing method
AssigneeSharp Kabushiki Kaisha
InventorsAtsushi OGAWA, Manabu TOHSAKI, Mai OKAZAKI, Yohsuke FUJISHIGE, Masayuki TAJIRI, Nobuyuki ITO
Life of this patent
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Abstract
In a nitride semiconductor including a Si substrate and a nitride semiconductor stacked body disposed on the Si substrate, the half value width of an X-ray diffraction rocking curve of the Si substrate is less than 160 arcsec.
Claims6
1-5. (canceled)
A nitride semiconductor comprising:
- a Si substrate;
- and a nitride semiconductor stacked body disposed on the Si substrate,
- wherein a half value width of an X-ray diffraction rocking curve of the Si substrate is less than 160 arcsec.
Dependencies are inferred from the claim text.