Method of manufacturing a semiconductor device

Abstract

Disclosed is a method of manufacturing a semiconductor device. The semiconductor device may be manufactured by forming a trench extended in a first direction within a first pipe gate, forming a trench filled structure including a first sacrificial layer along a surface of the trench, a second pipe gate along a surface of the first sacrificial layer, and a second sacrificial layer filled in a center area of the trench opened by the second pipe gate inside the trench, and forming a partition pipe gate disposed within the trench in a second direction crossing the first direction to divide the first sacrificial layer into first sacrificial patterns and to divide the second sacrificial layer into second sacrificial patterns.

Dependencies are inferred from the claim text.