Semiconductor Component Including Aluminum Silicon Nitride Layers
AssigneeInfineon Technologies Americas Corp.
InventorsScott Nelson, Srinivasan Kannan
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Abstract
There are disclosed herein various implementations of a semiconductor component including one or more aluminum silicon nitride layers. The semiconductor component includes a substrate, a group III-V intermediate body situated over the substrate, a group III-V buffer layer situated over the group III-V intermediate body, and a group III-V device fabricated over the group III-V buffer layer. The group III-V intermediate body includes the one or more aluminum silicon nitride layers.
Claims15
A semiconductor component comprising:
- a substrate;
- a group III-V intermediate body situated over said substrate;
- a group III-V buffer layer situated over said group III-V intermediate body;
- a group III-V device fabricated over said group III-V buffer layer;
- wherein said group III-V intermediate body comprises at least one aluminum silicon nitride layer and a nucleation layer,
- wherein said at least one aluminium silicon nitride layer is formed directly on said substrate,
- wherein said nucleation layer is formed directly on said aluminium silicon nitride layer.
2-3. (canceled)
(canceled)
11-15. (canceled)
A semiconductor component comprising:
- a substrate;
- a group III-V intermediate body including a nucleation layer situated over said substrate;
- said group III-V intermediate body including a lower aluminum silicon nitride layer situated over said nucleation layer;
- said group III-V intermediate body including transition layers and an upper aluminum silicon nitride layer situated over said lower aluminum silicon nitride layer;
- a group III-V buffer layer situated over said group III-V intermediate body;
- a group III-V device fabricated over said group III-V buffer layer.
Dependencies are inferred from the claim text.