Power semiconductor device
AssigneeMagnaChip Semiconductor, Ltd.
InventorsIn Su KIM, Jeong Hwan PARK, Seung Sik PARK, Ha Yong YANG
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Abstract
The present examples relate to a power semiconductor device. The present examples also relate to a power semiconductor device that maintains a breakdown voltage and reduces a gate capacitance through improving the structure of an Injection Enhanced Gate Transistor (IEGT), and thereby reduces strength of an electric field compared to alternative technologies. Accordingly, the present examples provide a power semiconductor device with a small energy consumption and with an improved switching functionality.
Claims20
A power semiconductor device comprising:
- a substrate having a first surface and a second surface opposite to the first surface;
- a drift region having a first conductivity type;
- an emitter electrode located on the first surface of the substrate;
- a drain electrode located on the second surface of the substrate;
- an emitter contact region in contact with the emitter electrode;
- a base region of a second conductivity type between the emitter contact region and the drift region;
- an electrically floating region having an impurity concentration lower than an impurity concentration of the base region;
- and
- a trench structure comprising a plurality of walls enclosing a region of the substrate,
- wherein the walls extend from the first surface of the substrate toward the drift region and separate the emitter contact region from the electrically floating region, and
- wherein the electrically floating region covers an end surface of each of the walls of the trench gate structure and prevents contact of the end surfaces with the drift region.
A power semiconductor substrate comprising:
- a substrate comprising a first conductivity type drift region;
- an emitter electrode located on an upper region of the substrate;
- a drain electrode located on a lower region of the substrate;
- an emitter contact region in contact with the emitter electrode;
- a second conductivity type base region formed below the emitter contact region;
- a second conductivity type floating region located in the trench emitter structure with a greater depth than the depth of the trench emitter structure;
- a first trench structure comprising a plurality of walls enclosing a region of the substrate, extending from the upper region of the substrate toward the drift region, and separating the emitter contact region from the floating region;
- and
- a second trench structure surrounding the first trench structure;
- wherein the second conductivity type floating region is electrically floating.
A power semiconductor device comprising:
- a substrate comprising a drift region having a first conductivity type, an emitter contact region, a base region having a second conductivity type and located between the drift region and the emitter contact region, and an electrically floating region;
- an emitter electrode located on a first surface of the substrate and in contact with the emitter contact region;
- a drain electrode located on a second surface of the substrate that is opposite to the first surface;
- a trench structure surrounding an enclosed region of the substrate using trench walls that extend from the first surface of the substrate toward the drift region,
- wherein the electrically floating region is bounded by the trench walls and extends around an end surface of each trench wall to prevent contact of the end surfaces with the drift region.
Dependencies are inferred from the claim text.