Coplanar Metal-Insulator-Metal Capacitive Structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChern-Yow Hsu, Shih-Chang Liu
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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChern-Yow Hsu, Shih-Chang Liu
Estimating the term…
A method of fabricating a metal-insulator-metal (MIM) capacitor structure on a substrate includes forming a patterned metal layer over the substrate; forming an insulator layer over the patterned metal layer; forming a second metal layer over the insulator layer; removing part of the insulating layer and part of the second metal layer thereby forming a substantially coplanar surface that is formed by the patterned metal layer, the insulator layer, and the second metal layer; removing a portion of the second metal layer and a portion of the patterned metal layer to form a fin from the insulator layer that protrudes beyond the first metal layer and the second metal layer; and forming an inter-metal dielectric layer over the fin.
A metal-insulator-metal (MIM) capacitor structure comprising:
A metal-insulator-metal (MIM) capacitor structure comprising:
A metal-insulator-metal (MIM) capacitor structure, comprising:
Dependencies are inferred from the claim text.