Quantum dot color filter substrate and manufacturing method thereof

A quantum dot (QD) color filter (CF) substrate, which comprises:

• a substrate, a CF layer disposed on the substrate, a color-resist protective layer disposed on the CF layer, a QD layer disposed on the color-resist protective layer, and a protective layer disposed on the QD layer;
• the substrate comprising:
• red sub-pixel areas, green sub-pixel areas, and blue sub-pixel areas;
• the CF layer comprising a red color-resist layer, a green color-resist layer and an organic transparent layer disposed respectively on the corresponding red sub-pixel areas, green sub-pixel areas, and blue sub-pixel areas;
• the QD layer comprising:
• a first QD layer located on the red sub-pixel areas and green sub-pixel areas, and a second QD layer located on the blue sub-pixel areas;
• the QD layer comprising:
• a first QD layer located on the red sub-pixel areas and green sub-pixel areas, and a second QD layer located on the blue sub-pixel areas;
• the QD layer being formed by making a solvent volatile from a QD solution mixing a red QD material and a green QD material;
• the red QD material and the green QD material in the first QD layer emitting red and green light respectively under the excitement by blue light;
• the QD material in the second QD layer not emitting light when excited;
• the QD CF substrate being used to a display using blue backlight.

A manufacturing method for quantum dot (QD) color filter (CF) substrate, which comprises:

• Step 1:
• providing a substrate, the substrate comprising:
• red sub-pixel areas, green sub-pixel areas, and blue sub-pixel areas;
• Step 2:
• forming a patterned red color-resist layer and a green color-resist layer, and an organic transparent color-resist layer respectively on the corresponding red sub-pixel areas, green sub-pixel areas, and blue sub-pixel areas of the substrate to obtain a color filter (CF) layer comprising a red color-resist layer, a green color-resist layer and an organic transparent layer;
• forming a photo-resist protective layer on the CF layer;
• Step 3:
• coating a layer of QD solution on the photo-resist protective layer, the QD solution being obtained by dispersing the treated oil-soluble red and green QD material in a solvent;
• heating the QD solution of to make the solvent volatile;
• repeating the steps of coating QD solution and heating to make solvent volatile a plurality of times to obtain a QD layer of uniform thickness;
• Step 4:
• providing an organic transparent photo-resist material on the QD layer, using a lithography etching process to pattern the organic transparent photo-resist material, removing the portion of the organic transparent photo-resist material located above the blue sub-pixel areas to obtain a photo-resist layer;
• Step 5:
• using the photo-resist layer as a masking layer to use a quencher able to quench QD fluorescence on the QD layer to perform selective quenching, wherein the QD layer located above the red sub-pixel areas and green sub-pixel areas not affected by the quenching due to the shielding by the photo-resist layer to become a first QD layer, and the QD material in the QD layer located above the blue sub-pixel areas being quenched because not covered by photo-resist layer, and becoming a second QD layer;
• and
• Step 6:
• coating a curing gel on the photo-resist layer and the QD layer;
• the curing gel forming a protective layer with the photo-resist layer after curing;
• wherein the solvent of QD solution is petroleum ether, methylene chloride, or ethyl acetate;
• wherein the QD material in the QD solution is one or more of the II-VI group QD material and III-V group QD material;
• wherein in Step 3, the thickness of the QD layer is 0.5-5 um;
• wherein in Step 5, the quencher is organic agent able to absorb electrons.