Semiconductor memory device
AssigneeKabushiki Kaisha Toshiba
InventorMasato SHINI
Life of this patent
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Abstract
A semiconductor memory device according to an embodiment comprises: a first wiring line extending in a first direction; a second wiring line extending in a second direction, the second direction intersecting the first direction; and a memory cell disposed at an intersection of the first wiring line and the second wiring line, the memory cell including a first film whose resistance changes electrically, a second film having conductivity, and a third film having an insulating property which are stacked sequentially in a third direction that intersects the first and second directions.
Claims16
-6. (canceled)
A semiconductor memory device, comprising:
- when three directions crossing each other are set to first, second, and third, directions, respectively,
- a plurality of first wiring lines which are arranged in the third direction, and which extend in the first direction;
- a second wiring line extending in the third direction;
- a plurality of memory cells disposed at intersections of the plurality of first wiring lines and the second wiring line;
- and
- a first insulating film disposed between two of the first wiring lines adjacent in the third direction,
- one of the memory cells including a first film whose resistance changes electrically, a second film having conductivity, and a third film having an insulating property which are stacked sequentially in the second direction, and
- the two first wiring lines being more distantly separated from the second wiring line in the second direction than the first insulating film.
(canceled)
Dependencies are inferred from the claim text.