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US 2017/0256579 A1Published application
Semiconductor device having a light receiving element
AssigneeSii Semiconductor Corporation
InventorTakeshi KOYAMA
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Abstract
Provided is a semiconductor device having a light receiving element in which a plurality of photodiodes are formed on a top surface of a P-type semiconductor substrate, an insulating oxide film is formed on surfaces of the photodiodes 51 via a buried oxide film, and an SOI layer of single crystal silicon is formed between a photodiode and an adjacent photodiode via the buried oxide film for shielding unnecessary light.
Claims5
A semiconductor device comprising a light receiving element,
- the light receiving element comprising a plurality of photodiodes each having a PN junction formed between a first conductivity type semiconductor substrate and a second conductivity type layer region formed on an upper surface of the first conductivity type semiconductor substrate,
- the semiconductor device comprising:
- an SOI layer formed between a photodiode and an adjacent photodiode among the plurality of photodiodes and above the first conductivity type semiconductor substrate via a buried oxide film, and fowled of single crystal silicon;
- and
- an oxide film formed on the plurality of photodiodes and the SOI layer.
2 more elements
Dependencies are inferred from the claim text.