Semiconductor device and a method for fabricating the same

A method of manufacturing a semiconductor device, the method comprising:

• forming a first gate structure and a second gate structure over a substrate, the first gate structure including a first gate electrode, a first cap insulating layer disposed over the first gate electrode and first sidewall spacers disposed on both side faces of the first gate electrode and the first cap insulating layer, the second gate structure including a second gate electrode, a second cap insulating layer disposed over the second gate electrode and second sidewall spacers disposed on both side faces of the second gate electrode and the second cap insulating layer;
• forming a first source/drain region in an area between the first gate structure and the second gate structure;
• forming a first insulating layer over the first source/drain region and between the first gate structure and the second gate structure;
• after the forming the first insulating layer, recessing the first and second cap insulating layers;
• recessing the first and second sidewall spacers, thereby forming a first space over the recessed first cap insulating layer and the recessed first sidewall spacers and a second space over the recessed second cap insulating layer and the recessed second sidewall spacers;
• forming a first protective layer in the first space and a second protective layer in the second space;
• forming a second insulating layer over the first and second gate structures having the first and second protective layers;
• forming a contact hole over the source/drain region so as to expose the source/drain region;
• and
• filling the contact hole with a conductive material, thereby forming a contact plug that is in contact with the source/drain region.

A method of manufacturing a semiconductor device, the method comprising:

• forming a gate structure over a substrate, the gate structure including a gate electrode, a cap insulating layer disposed over the gate electrode and sidewall spacers disposed on opposing side faces of the gate electrode and the cap insulating layer;
• forming a first insulating layer on side faces of the sidewall spaces, the side faces being not in contact with the gate electrode and the cap insulating layer;
• after the forming the first insulating layer, removing an upper portion of the cap insulating layer and removing upper portions of the sidewall spacers, thereby forming a space over the cap insulating layer and the sidewall spacers;
• forming a protective layer in the space such that the first protective layer is formed on the cap insulating layer and on the sidewall spacers;
• and
• forming a second insulating layer over the protective layer and the first insulating layer,
• wherein a material of the protective layer, a material of the sidewall spacers, a material of the cap insulating layer and a material of the first insulating layer are different from each other.