Semiconductor device and manufacturing method for the same
AssigneeSK hynix Inc.
InventorsMyeong Seong YOON, Il Seok SEO
Life of this patent
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Abstract
A semiconductor device includes interlayer insulating layers and conductive patterns alternately stacked over a pipe gate, a first slit and a second slit penetrating the interlayer insulating layers and the conductive patterns and crossing each other, an etch stop pad groove overlapping an intersection of the first slit and the second slit, arranged in the pipe gate, and connected to the first slit or the second slit, and slit insulating layers filling the first slit, the second slit and the etch stop pad groove.
Claims24
A semiconductor device comprising:
- interlayer insulating layers and conductive patterns alternately stacked over a pipe gate;
- a first slit and a second slit penetrating the interlayer insulating layers and the conductive patterns, and crossing each other;
- an etch stop pad groove overlapping an, intersection of the first slit and the second slit, arranged in the pipe gate, and connected'to the first slit or the second slit:
- and
- slit insulating layers filling the first slit, the second slit and the etch stop pad groove.
The sem conductor device of claim wherein the slit insulating layers comprise:
- a first slit insulating layer filling the first slit and the etch stop pad groove;
- and
- a second slit insulatinglayer filling the second
The semiconductor device of claim wherein the slit insulating layers comprise:
- a first slit insulating layer filling the first slit;
- and
- a second slit insulating layer filling the second slit and the etch stop pad groove.
A manufacturing method of a semiconductor device, the manufacturing method comprising:
- forming a pipe gate in which an etch stop pad groove filled with an etch stop pattern is formed;
- alternately stacking first material layers and second material layers over the pipe gate;
- forming a first slit penetrating the first material layers and the second material layers and overlapping the etch stop pattern;
- opening the etch stop pad groove by removing the etch stop pattern through the first slit;
- forming a first slit insulating layer filling the first slit and the etch stop pad groove;
- and
- forming a second penetrating the first material layers and the second material layers, the second slit crossing the first slit at an overlapping portion of the first slit and the etch stop pad groove.
The manufacturing method of claim11, wherein the forming of the pipe gate comprises:
- forming a second conductive layer over a first conductive layer;
- forming the etch stop pad groove by etching the second conductive layer;
- forming a pad sacrificial layer filling the etch stop pad groove;
- forming a third conductive layer over the second conductive layer to cover the pad sacrificial layer;
- forming a dummy hole penetrating the third conductive layer to expose an upper surface of the pad sacrificial layer;
- opening the etch stop pad groove by removing the pad sacrificial layer through the dummy hole;
- and
- filling the etch stop pad groove and the dummy hole with the etch stop pattern.
A manufacturing method of a semiconductor device, the manufacturing method comprising:
- forming a pipe gate in which an etch stop pad groove filled with an etch stop pattern is formed;
- alternately stacking first material layers and second materiallayers over the pipe gate;
- forming a first slit penetrating the first material layers and the second material layers and overlapping the etch stop pattern;
- forming a first slit insulating layer in the first slit;
- forming a second slit penetrating the first material layers and the second material layers, the second slit intersecting the first slit at an overlapping portion of the first slit and the etch stop pad groove;
- removing the etch stop pattern through the second slit;
- and
- forming a second sl it insulating layer filing the second silt and the etch stop pad groove.
The an uring method of claim20, furthercomprising:
- forming a lower pipe groove by etching the first conductive layer before forming the second conductive layer;
- is forming a lower pipe sacrificial layer filling the lower pipe groove;
- forming an upper pipe groove by etching the second conductive layer when forming the etch stop pad groove;
- forming an upper pipe sacrificial layer ng the upper pipe groove when forming the pad sacrificial layer;
- forming at least one pair of lower pipe opening holes exposing an upper surface of the lower pipe sacrificial layer, and at least one pair of upper pipe opening holes exposing an upper surface of the upper pipe sacrificial layer by etching at least one of the second conductive layer and the third conductive layer when forming the dummy holes;
- removing the lower pipe sacrificial layer and the upper pipe sacrificial layer through the lower pipe opening holes and the upper pipe opening holes, respectively when removing the pad sacrificial layer;
- and
- forming a lower protective layer filling the lower pipe groove and the lower pipe opening holes and an upper protective layer filling the upper pipe groove and the upper pipe opening holes when forming the etch stop pattern,
Dependencies are inferred from the claim text.