Semiconductor device

A semiconductor device comprising:

• a semiconductor substrate including a major surface;
• a first diffusion region formed in the major surface in a main cell region;
• a second diffusion region formed in the major surface in a terminal region outside the main cell region;
• an insulating film formed on the major surface and having first and second contact holes formed on the first and second diffusion regions respectively;
• a first electrode formed in the first contact hole and connected to the st diffusion region;
• a second electrode formed in the second contact hole and connected to the second diffusion region;
• a semi-insulating film covering the second electrode;
• and
• a third electrode formed on the first electrode,
• wherein the first and second electrodes are made of the same material,
• the first electrode does not completely fill the first contact hole,
• the second electrode does not completely fill the second contact hole,
• the semi-insulating film completely fills the second contact hole, and
• the third electrode completely fills the first contact hole.