E-fuse structure of semiconductor device

A semiconductor device including an e-fuse structure, comprising:

• a substrate;
• a first metal pattern formed at a first vertical level above the substrate;
• a second metal pattern formed at a second vertical level above the substrate closer to the substrate than the first vertical level;
• a third metal pattern formed at a third vertical level between the first vertical level and the second vertical level;
• a first conductive via structure physically connecting the first metal pattern to the third metal pattern;
• and
• a second conductive via structure physically connecting the third metal pattern to the second metal pattern,
• wherein the first metal pattern includes a first part extending in a first direction, a second part extending in the first direction, a third part and a fourth part between the first part and the second part, and a fifth part physically connecting the first part to the third part,
• wherein the second part is not electrically connected to the first, third, fourth or fifth parts,
• wherein the third part and the fourth part are arranged in the first direction, spaced apart from each other and electrically separated.