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US 2017/0256490 A1Published application
Low capacitance through substrate via structures
AssigneeMicron Technology, Inc.
InventorsDeepak C. Pandey, HAITAO LIU, CHANDRA MOULI
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Abstract
Apparatuses and methods are disclosed herein for the formation of low capacitance through substrate via structures. An example apparatus includes an opening formed in a substrate, wherein the opening has at least one sidewall, a first dielectric at least formed on the sidewall of the opening, a first conductor at least formed on the first dielectric, a second dielectric at least formed on the first conductor, and a second conductor at least formed on a sidewall of the second dielectric.
Claims25
An apparatus, comprising:
- an opening formed in a substrate, wherein the opening has at least one sidewall;
- a first dielectric at least formed on the at least one sidewall of the opening;
- a first conductor at least formed on the first dielectric;
- a second dielectric at least formed on the first conductor;
- and
- a second conductor abutted against a sidewall of the second dielectric.
3 more elements
An apparatus, comprising:
- a substrate with a through substrate via formed in an opening therein, wherein the through substrate via comprises:
- first and second dielectrics;
- a first conductor disposed between the first and second dielectrics;
- and
- a second conductor disposed onabutted against the second dielectric,
- wherein the through substrate via extends through the substrate from a top surface of the substrate to a bottom surface of the substrate.
3 more elements
A method, comprising:
- forming a first dielectric layer in a through substrate via opening;
- forming a first conductive layer on the first dielectric layer;
- forming a second dielectric layer on the first conductive layer;
- and
- forming a second conductive layer on the second dielectric layer to fill a remaining area of the via opening.
2 more elements
A method, comprising:
- forming a via opening in a substrate;
- depositing a first dielectric layer at least on a sidewall of the via opening;
- forming a first conductor on the first dielectric layer;
- forming a second dielectric on the first conductor;
- depositing a second conductor on the second dielectric,
2 more elements
Dependencies are inferred from the claim text.