Manufacturing method of semiconductor device

A method of manufacturing a semiconductor device comprising the steps of:

• (a) preparing a semiconductor substrate including a semiconductor device region surrounded by a scribe region in plan view;
• (b) forming a semiconductor element on the semiconductor substrate in the semiconductor device region and forming a wiring structure on a main surface of the semiconductor substrate in the semiconductor device region;
• (c) after the step (b), polishing a back surface opposite to the main surface of the semiconductor substrate to thin the semiconductor substrate;
• (d) after the step (c), measuring a thickness of the semiconductor substrate;
• (e) after the step (d), forming a back electrode on the back surface of the semiconductor substrate;
• and
• (f) cutting off the semiconductor substrate along the scribe region,
• wherein the wiring structure formed in the step (b) includes one or more layers of insulating films, and
• wherein in a stage of finishing the step (b), the one or more layers of the insulating films included in the wiring structure are not formed on the main surface of the semiconductor substrate in the scribe region, and
• wherein in the step (d), the thickness of the semiconductor substrate is measured in the scribe region according to a laser interferometry.