Back to results
US 2017/0256452 A1Published application
Methods of Forming Through Substrate Interconnects
AssigneeMicron Technology, Inc.
InventorsDave Pratt, Andy Perkins
Life of this patent
Estimating the term…
Abstract
A method of forming a through substrate interconnect includes forming a via into a semiconductor substrate. The via extends into semiconductive material of the substrate. A liquid dielectric is applied to line at least an elevationally outermost portion of sidewalls of the via relative a side of the substrate from which the via was initially formed. The liquid dielectric is solidified within the via. Conductive material is formed within the via over the solidified dielectric and a through substrate interconnect is formed with the conductive material.
Claims20
1:
- A method of forming a through substrate interconnect sequentially comprising:
- forming a via into a semiconductor substrate comprising first and second major sides, the via being formed from the first major side to a conductive bondpad which is more proximate the second major side than the first major side, the conductive bondpad being exposed along an outermost surface of the second major side;
- applying a liquid dielectric to line at least an elevationally outermost portion of sidewalls of the via relative the first major side;
- and
- solidifying the liquid dielectric within the via.
2 more elements
2:
- The method of claim 1 further comprising forming conductive material within the via over the solidified dielectric and forming a through substrate interconnect with the conductive material.
3:
- The method of claim 1 wherein the forming of the via stops on a back-side of the bondpad.
4:
- The method of claim 1 wherein the first major side is a back-side of the substrate, and the second major side is a front-side of the substrate.
5:
- The method of claim 1 wherein the first major side is a front-side of the substrate, and the second major side is a back-side of the substrate.
6:
- The method of claim 1 wherein the applying is conducted in multiple separate liquid dielectric application steps.
7:
- The method of claim 1 wherein the applying is of spin-on liquid dielectric in a spin-on manner
8:
- The method of claim 1 wherein the applying lines all sidewalls of the via with liquid dielectric.
9:
- The method of claim 1 wherein the applying completely covers a base of the via with liquid dielectric.
10:
- The method of claim 1 wherein the applying lines all sidewalls of the via with liquid dielectric, and completely covers a base of the via with liquid dielectric.
11:
- A method of forming a through substrate interconnect, comprising:
- forming a via into a semiconductive material, the via being formed from a first side of the substrate to a conductive bondpad, the conductive bondpad being exposed along an outermost surface of a second side of the substrate;
- forming dielectric material along sidewalls of the via;
- and
- forming conductive material within the via directly against the dielectric material.
2 more elements
12:
- The method of claim 11 wherein the forming the dielectric material comprises applying liquid dielectric material and subsequent solidifying of the liquid dielectric material within the via.
13:
- The method of claim 12 further comprising etching the solidified dielectric material.
14:
- The method of claim 11 wherein the forming the via extends the via entirely through the bondpad.
15:
- A method of forming a through substrate interconnect, comprising:
- forming a passivation dielectric over a side of a semiconductor substrate;
- forming a via through the passivation dielectric and into the substrate, the via extending from a first side of the substrate to a conductive bond pad, the conductive bond pad being exposed on a second side of the substrate;
- depositing a dielectric material over the passivation dielectric to line at least an elevationally outermost portion of sidewalls of the via;
- recessing the dielectric material within the via;
- applying a liquid dielectric into the via at least to line an elevationally outermost portion of sidewalls of the via above the recessed dielectric material and to be received laterally over an elevationally outermost portion of the recessed dielectric material received within the via;
- solidifying the liquid dielectric within the via;
- and
- forming conductive material within the via over the solidified dielectric and forming a through substrate interconnect with the conductive material.
6 more elements
16:
- The method of claim 15 wherein the recessing of the dielectric material within the via is to at or below a base of the passivation dielectric.
17:
- The method of claim 16 wherein the recessing of the dielectric material within the via is to at the base of the passivation dielectric.
18:
- The method of claim 16 wherein the recessing of the dielectric material within the via is to below the base of the passivation dielectric.
19:
- The method of claim 18 wherein the recessing of the dielectric material within the via is such that the dielectric material is received at least 2 microns elevationally inward of the base of the passivation dielectric.
20:
- The method of claim 15 wherein the passivation dielectric and the dielectric material are formed to have different coefficients of thermal expansion, the liquid dielectric being solidified to have a coefficient of thermal expansion which is between those of the passivation dielectric and the dielectric material.