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US 2017/0256447 A1Published application
Insulating a via in a semiconductor substrate
AssigneeInternational Business Machines Corporation
InventorsMUKTA G. FAROOQ, JENNIFER A. OAKLEY, KEVIN S. PETRARCA, NICOLE R. REARDON, ANDREW H. SIMON
Life of this patent
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Abstract
Insulating a via in a semiconductor substrate, including: depositing, in the via, a dielectric layer; depositing, in the via, a barrier layer; allowing the barrier layer to oxidize; and depositing, in the via, a conducting layer.
Claims13
1-8. (canceled)
A semiconductor substrate, comprising:
- one or more vias, each of the one or more via including;
- a dielectric layer deposited on the via walls;
- a barrier layer deposited on the dielectric layer, wherein the barrier layer is oxidized;
- and
- a conducting layer deposited on the barrier layer.
2 more elements
A semiconductor substrate, comprising:
- a dielectric layer deposited on the semiconductor substrate;
- and
- a capacitor structure, including:
- a barrier layer deposited on the dielectric layer, wherein the barrier layer is partially oxidized;
- and
- a conducting layer deposited on the barrier layer.
3 more elements
Dependencies are inferred from the claim text.