Semiconductor devices, finfet devices and methods of forming the same

A FinFET device, comprising:

• a substrate having at least one fin;
• a first gate stack across the at least one fin;
• a first dielectric layer aside the first gate stack, wherein a top surface of the first gate stack is lower than a top surface of the first dielectric layer such that a first recess is provided above the first gate stack;
• a second dielectric layer over the first dielectric layer and filling in the first recess;
• a connector through the second dielectric layer and electrically connected to the first gate stack;
• and
• a shielding layer between the first dielectric layer and the second dielectric layer and in physical contact with the connector, wherein a contact area between the shielding layer and one side of the connector is greater than a contact area between the shielding layer and another side of the connector.

A method of forming a FinFET device, comprising:

• providing a substrate having a first gate stack formed thereon and a first dielectric layer formed aside the first gate stack;
• partially removing the first gate stack such that a first recess is provided above the remaining first gate stack;
• forming a shielding layer on a surface of the first recess, around a top corner of the first recess and on a top surface of the first dielectric layer;
• forming a second dielectric layer over the shielding layer, wherein the second dielectric layer fills in the first recess;
• and
• forming a connector through the second dielectric layer and the shielding layer.