Soi substrate and manufacturing method thereof

Abstract

This invention application provides a method for manufacturing a SOI substrate, and the method comprising: providing a first semiconductor substrate; growing a first insulating layer on a top surface of the first semiconductor substrate for forming a first wafer; irradiating the first semiconductor substrate via a ion beam for forming a deuterium and helium co-doping layer to a pre-determined depth from a top surface of the first insulating layer; growing a second insulating layer on a top surface of the second semiconductor substrate for form a second wafer; bonding the first wafer with the second wafer; annealing the first wafer and second wafer; separating a part of the first wafer from the second wafer; and forming a deuterium and helium co-doping semiconductor layer on the second wafer.

Dependencies are inferred from the claim text.