Semiconductor substrate polishing methods and slurries and methods for manufacturing silicon on insulator structures
AssigneeSunEdison Semiconductor Limited (UEN201334164H)
InventorsHui Wang, Vandan Tanna, Tracy Michelle Ragan, James Raymond Capstick
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Abstract
Polishing slurries for polishing semiconductor substrates are disclosed. The polishing slurry may include first and second sets of colloidal silica particles with the second set having a silica content greater than the first set.
Claims20
A method for polishing a semiconductor substrate having a front surface and a back surface generally parallel to the front surface, the method comprising contacting the front surface of the substrate with a polishing pad in the presence of a polishing slurry, the polishing slurry comprising:
- a first set of silica particles, the first set of silica particles having a silica content of X1 wt %;
- and
- a second set of silica particles, the second set of silica particles being polymer-encapsulated and having a silica content of X2 wt %, wherein X2 is greater than X1.
A polishing slurry for polishing a semiconductor wafer, the polishing slurry comprising:
- a first set of silica particles, the silica particles having a silica content of X1 wt %;
- a second set of silica particles, the second set of silica particles being polymer-encapsulated and having a silica content of X2 wt %, wherein X2 is greater than X1.
Dependencies are inferred from the claim text.