Universal process kit

A plasma chamber for performing a semiconductor process on a substrate, comprising:

• a substrate support assembly;
• and
• a process kit suitable for use adjacent the substrate support assembly and coupled to a flange of the substrate support assembly, comprising:
• an edge ring comprising a notch disposed along an inner diameter of the edge ring, wherein the notch has a vertical component that rises less than about 1200 μm and a horizontal component that extends between about 1300 μm and about 2500 μm;
• and
• a conductive member coupled to the edge ring.

A process kit suitable for use in a process chamber, comprising:

• an edge ring encircling a perimeter of a substrate support assembly disposed in the process chamber, the edge ring comprising:
• an inner ring disposed adjacent the substrate support assembly, comprising a non-metallic, conductive material and a notch disposed along an inner diameter of the inner ring, wherein the notch has a vertical component that rises less than about 1200 μm and a horizontal component that extends between about 1300 μm and about 2500 μm;
• and
• an outer ring coupled to the inner ring and encircling a perimeter of the inner ring, wherein the outer ring comprises a quartz material;
• at least one thermal contact pad coupled to the inner ring and disposed within a slot formed in the inner ring;
• and
• a conductive member coupled to the outer ring.