Lithography Patterning with a Gas Phase Resist
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsSHU-HAO CHANG, KUO-CHANG KAU, KEVIN HUANG, JENG-HORNG CHEN
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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsSHU-HAO CHANG, KUO-CHANG KAU, KEVIN HUANG, JENG-HORNG CHEN
Estimating the term…
Disclosed is a method for lithography patterning. The method includes providing a substrate, forming a deposition enhancement layer (DEL) over the substrate, and flowing an organic gas near a surface of the DEL. During the flowing of the organic gas, the method further includes irradiating the DEL and the organic gas with a patterned radiation. Elements of the organic gas polymerize upon the patterned radiation, thereby forming a resist pattern over the DEL. The method further includes etching the DEL with the resist pattern as an etch mask, thereby forming a patterned DEL.
A method for lithography patterning, comprising:
An apparatus, comprising:
A method, comprising:
Dependencies are inferred from the claim text.