Asymmetric Application of Pressure to a Wafer During a CMP Process

A method comprising:

• measuring a topography of a wafer;
• determining that a first portion of the wafer has a greater thickness than a specified thickness;
• placing the wafer adjacent a membrane;
• and
• while performing a Chemical Mechanical Polishing (CMP) process to a first side of the wafer, using the membrane to apply additional pressure to a selectable region of the wafer, the selectable region corresponding to the first portion, the region corresponding to an asymmetric part of the wafer.

A system for performing a Chemical Mechanical Polishing (CMP) process, the system comprising:

• a measurement module to determine a topography of a wafer;
• a CMP module comprising:
• a polishing pad;
• a retaining ring;
• and
• a polish head configured to apply varying pressure to different portions of the wafer secured by the retaining ring, the different portions being individually selectable on a non-radial grid;
• and
• a control module to:
• determine portions of the wafer having a greater thickness than a specified thickness;
• and
• cause the polish head to apply additional pressure to regions of the wafer corresponding to the portions of the wafer having the greater thickness than the specified thickness.