Method and apparatus for depositing amorphous silicon film

A method for depositing an amorphous silicon film, the method comprising:

• supplying a source gas and an atmospheric gas onto a substrate in a state where the substrate is loaded in a chamber;
• and
• depositing the amorphous silicon film on the substrate at a process temperature under a process pressure,
• wherein the source gas comprises at least one of silane (SiH2), disilane (Si2H6), and dichlorosilane (SiCl2H2),
• wherein the process temperature is adjusted to be in a range of about 540° C. to about 580° C. and the process pressure is adjusted to be in a range of about 8 Torr to about 300 Torr, so that the source gas is pyrolyzed to deposit the amorphous silicon film on the substrate, and
• wherein the atmospheric gas comprises at least one of hydrogen and helium.