Method for producing nitride semiconductor stacked body and nitride semiconductor stacked body

A method for producing a nitride semiconductor stacked body, the method comprising:

• a first nitride semiconductor layer forming step of forming a first nitride semiconductor layer above a substrate within a reaction furnace;
• a second nitride semiconductor layer forming step of forming a second nitride semiconductor layer above the first nitride semiconductor layer;
• and
• a third nitride semiconductor layer forming step of forming a third nitride semiconductor layer on an upper surface of the second nitride semiconductor layer, the third nitride semiconductor layer having a band gap larger than a band gap of the second nitride semiconductor layer,
• wherein no interval is provided between the second nitride semiconductor layer forming step and the third nitride semiconductor layer forming step, and the third nitride semiconductor layer forming step is performed continuously after the second nitride semiconductor layer forming step,
• wherein the second nitride semiconductor layer forming step includes
• a fourth nitride semiconductor layer forming step of forming a fourth nitride semiconductor layer and
• a fifth nitride semiconductor layer foil ling step of forming a fifth nitride semiconductor layer above the fourth nitride semiconductor layer,
• wherein a temperature of the substrate in the fifth nitride semiconductor layer forming step is higher than the temperature of the substrate in the fourth nitride semiconductor layer forming step, and
• wherein a pressure inside the furnace in the fifth nitride semiconductor layer forming step is lower than the pressure inside the furnace in the fourth nitride semiconductor layer forming step.