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US 2017/0256405 A1Published application
Selective nanoscale growth of lattice mismatched materials
AssigneeStc.Unm
InventorsSeung-Chang Lee, Steven R.J. Brueck
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Abstract
Exemplary embodiments provide materials and methods of forming high-quality semiconductor devices using lattice-mismatched materials. In one embodiment, a composite film including one or more substantially- single- particle-thick nanoparticle layers can be deposited over a substrate as a nanoscale selective growth mask for epitaxially growing lattice-mismatched materials over the substrate.
Claims6
A semiconductor device comprising:
- a substrate;
- a composite film comprising one or more substantially-single-particle-thick nanoparticle layers disposed over the substrate, wherein the composite film comprises a plurality of nanoparticles having an average diameter d and a plurality of inter-particle spaces having an average lateral dimension s, wherein an aspect ratio d/s ranges from about 0.09 to about 0.3;
- and
- an epitaxial material disposed over the substrate through the plurality of inter-particle spaces and laterally coalesced over a top surface of the composite film, wherein the epitaxial material has a lattice mismatch with the substrate.
1 more element
Dependencies are inferred from the claim text.