Method of Manufacturing Buffer Layers Having Composite Structures

A method of manufacturing an optoelectronic or electronic device that reduces misfit dislocation, the method comprising:

• depositing a basis buffer layer of a first semiconductor material on a substrate;
• forming a transitional sublayer of the first semiconductor material of a composite buffer layer on the basis buffer layer by supplying pulses of reactants for the first semiconductor material for a first total pulse time period;
• forming a target sublayer of a second semiconductor material of the composite buffer layer on the transitional sublayer by supplying pulses of reactants for the second semiconductor material for a second total pulse time period;
• and
• growing additional composite buffer layers along a growth direction from the substrate to the composite buffer layers, by repeating steps of forming the transitional sublayer and forming the target sublayer;
• wherein the first total pulse time period for each transitional sublayer and the second total pulse time period for each target sublayer are adjusted such that lattice constants of the target sublayers increase along the growth direction.

A method of manufacturing a semiconductor wafer that reduces misfit dislocation, the method comprising:

• depositing a basis buffer layer of a first semiconductor material on a substrate;
• forming a transitional sublayer of the first semiconductor material of a composite buffer layer on the basis buffer layer;
• forming a target sublayer of a second semiconductor material of the composite buffer layer on the transitional sublayer, the composite buffer layer having a thickness ratio that is a ratio of a thickness of the target sublayer to a thickness of the transitional sublayer;
• and
• growing additional composite buffer layers along a growth direction from the substrate to the composite buffer layers, by repeating steps of forming the transitional sublayer and forming the target sublayer, wherein the thickness ratios of the composite buffer layers increase along the growth direction.