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US 2017/0256402 A1Published application
Self-assembled monolayer blocking with intermittent air-water exposure
AssigneeApplied Materials, Inc.
InventorsTobin KAUFMAN-OSBORN, Keith Tatseun WONG
Life of this patent
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Abstract
Implementations described herein generally relate to processes for the fabrication of semiconductor devices in which a self-assembled monolayer (SAM) is used to achieve selective area deposition. Methods described herein relate to alternating SAM molecule and hydroxyl moiety exposure operations which may be utilized to form SAM layers suitable for blocking deposition of subsequently deposited materials.
Claims20
A method of processing a substrate, comprising:
- exposing a substrate to a self-assembled monolayer (“SAM”) molecule to achieve selective deposition of a SAM on a first material, wherein the substrate comprises an exposed first material and an exposed second material;
- exposing the substrate to a hydroxyl moiety;
- repeating the exposing the substrate to a SAM molecule and the exposing the substrate to a hydroxyl moiety in a time ratio of between about 1:1 and about 100:1, respectively;
- after performing the repeating, exposing the substrate to the SAM molecule;
- selectively depositing a third material on the exposed second material;
- and
- removing the SAM from the first material.
4 more elements
A method of processing a substrate, comprising:
- exposing a substrate to a self-assembled monolayer (“SAM”) molecule to achieve selective deposition of a SAM on a first material in a first processing chamber, wherein the substrate comprises an exposed first material and an exposed second material;
- transferring the substrate to a second processing chamber;
- exposing the substrate to a hydroxyl moiety formed from water vapor in the second processing chamber;
- repeating the exposing the substrate to a SAM molecule in the first processing chamber and the exposing the substrate to a hydroxyl moiety in the second processing chamber in a time ratio of between about 1:1 and about 100:1, respectively;
- after performing the repeating, exposing the substrate to the SAM molecule in the first processing chamber;
- selectively depositing a third material on the exposed second material;
- and
- removing the SAM from the first material.
5 more elements
A method of processing a substrate, comprising:
- exposing a substrate to a self-assembled monolayer (“SAM”) molecule to achieve selective deposition of a SAM on a first material in a processing chamber, wherein the substrate comprises an exposed first material and an exposed second material;
- transferring the substrate to an ambient air environment;
- exposing the substrate to a hydroxyl moiety formed from ambient air in the ambient air environment;
- repeating the exposing the substrate to a SAM molecule in the processing chamber and the exposing the substrate to a hydroxyl moiety in the ambient air environment in a time ratio of between about 1:1 and about 100:1, respectively;
- after performing the repeating, exposing the substrate to the SAM molecule in the processing chamber;
- selectively depositing a third material on the exposed second material;
- and
- removing the SAM from the first material.
5 more elements
Dependencies are inferred from the claim text.