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US 2017/0256400 A1Published application
Semiconductor device and method of manufacturing semiconductor device
AssigneeFujitsu Limited
InventorsKozo Makiyama, Shirou OZAKI
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Abstract
A semiconductor device includes a first semiconductor layer made of a nitride semiconductor and formed on a substrate, a second semiconductor layer made of a material including InAlN and formed on the first semiconductor layer, an insulator layer formed by an oxidized surface part of the second semiconductor layer, a gate electrode formed on the insulator layer, and a source electrode and a drain electrode respectively formed on the first or second semiconductor layer.
Claims17
A semiconductor device comprising:
- a first semiconductor layer made of a nitride semiconductor and provided on a substrate surface;
- a second semiconductor layer made of a nitride semiconductor including InAlN and provided above a surface of the first semiconductor layer opposite from the substrate surface;
- a source electrode and a drain electrode respectively provided on the surface of the first semiconductor layer or a first surface of the second semiconductor layer opposite from the first semiconductor layer;
- a insulator layer made of a material including Al and In and provided on the first surface of the second semiconductor layer;
- and
- a gate electrode provided on a surface of the insulator layer,
- wherein an Al-content of the insulator layer is higher than an In-content of the insulator layer.
4 more elements
Dependencies are inferred from the claim text.