High Temperature Atomic Layer Deposition Of Silicon Oxide Thin Films

A process to deposit silicon oxide comprises steps of:

• a) providing a substrate in a reactor;
• b) introducing into the reactor at least one silicon precursor;
• c) purging reactor with purge gas;
• d) introducing an oxygen source into the reactor;
• e) purging reactor with purge gas;
• and
• f) repeating steps b through e until desired thickness is deposited;
• wherein process temperature ranges from 500 to 800° C. and pressure ranges from 50 miliTorr (mT) to 760 Torr and the silicon precursor comprises at least one anchoring functionality and a passivating functionality comprising a Si-Me group,
• wherein the process in conducted at one or more temperatures ranging from 500 to 800° C. and one or more pressures ranging from 50 miliTorr (mT) to 760 Torr, wherein the at least one silicon precursor having a formula selected from the group consisting of:
• R1R2mSi(NR3R4)nXp I.
• wherein R1, R2, and R3 are each independently selected from hydrogen, a linear or branched C1 to C10 alkyl group, and a C6 to C10 aryl group;
• R4 is selected from, a linear or branched C1 to C10 alkyl group, and a C6 to C10 aryl group, a C3 to C10 alkylsilyl group;
• wherein R3 and R4 are linked to form a cyclic ring structure or R3 and R4 are not linked to form a cyclic ring structure;
• X is a halide selected from the group consisting of Cl, Br and I;
• m is 0 to 3;
• n is 0 to 2;
• and p is 0, 1, or 2 and m+n+p=3;
• and
• R1R2mSi(OR3)n(OR4)qXp II.
• wherein R1 and R2 are each independently selected from hydrogen, a linear or branched C1 to C10 alkyl group, and a C6 to C10 aryl group;
• R3 and R4 are each independently selected from a linear or branched C1 to C10 alkyl group, and a C6 to C10 aryl group;
• wherein R3 and R4 are linked to form a cyclic ring structure or R3 and R4 are not linked to form a cyclic ring structure;
• X is a halide atom selected from the group consisting of Cl, Br and I;
• m is 0 to 3;
• n is 0 to 2;
• q is 0 to 2 and p is 0 to 2 and m+n+q+p=3.