Trim method for patterning during various stages of an integration scheme

A method for critical dimension (CD) trimming of a structure pattern in a substrate, the method comprising:

• providing a substrate in a process chamber of a CD trimming system, the substrate comprising a first structure pattern and an underlying layer, the underlying layer comprising a silicon anti-reflective coating (SiARC) or a silicon oxynitride (SiON) layer, an optical planarization layer, and a target patterning layer;
• generating a CD trimming strategy for achieving integration objectives;
• performing an optional CD trimming process of the first structure pattern if required by the CD trimming strategy;
• performing a series of processes to open the SiARC or SiON layer and performing additional CD trimming if required by the CD trimming strategy;
• and
• performing a series of processes to open the optical planarization layer, the series of processes generating a final structure pattern, and performing additional CD trimming if required by the CD trimming strategy;
• wherein the planarization layer is one of a group comprising an advance patterning film (APL), an organic dielectric layer (ODL) or a spin-on hardmask (SOH) layer.