Formation of heteroepitaxial layers with rapid thermal processing to remove lattice dislocations

A material processing apparatus for applying a material coating layer onto a coating surface of a substrate comprising:

• an Atomic Layer Deposition reaction chamber including a substrate support disposed therein for supporting the substrate thereon wherein the ALD reaction chamber is operable to carry out a deposition process that includes depositing the material coating layer onto the coating surface wherein the deposition process is carried out at a deposition temperature ranging between 80 and 800° C. and at a reaction chamber internal pressure ranging between 1 and 500 mTorr;
• a process gas module operable to deliver doses of process gases into the reaction chamber;
• an exhaust system operably to remove process gases for the reaction chamber;
• a laser annealing module operable to perform in-situ laser annealing of the coating surface;
• and,
• a controller operable to carry out ALD material deposition cycles and to carry out laser annealing of the material layer.