Semiconductor structure with etched fin structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorShiang-Bau WANG
Life of this patent
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Abstract
Semiconductor structures are provided. The semiconductor structure includes a substrate and a first fin structure and a second fin structure formed over the substrate. The semiconductor structure further includes an isolation structure formed around the second fin structure and covering the first fin structure and a gate structure formed over the first fin structure and the second fin structure. The semiconductor structure further includes the first fin structure has a first height and the second fin structure has a second height higher than the first height, and the gate structure and the first fin structure are separated by the isolation structure.
Claims20
A semiconductor structure, comprising:
- a substrate;
- a first fin structure and a second fin structure formed over the substrate;
- an isolation structure formed around the second fin structure and covering the first fin structure;
- and
- a gate structure formed over the first fin structure and the second fin structure,
- wherein the first fin structure has a first height and the second fin structure has a second height higher than the first height, and the gate structure and the first fin structure are separated by the isolation structure.
A semiconductor structure, comprising:
- a substrate;
- a first fin structure and a second fin structure formed over the substrate;
- an isolation structure formed around sidewalls of the second fin structure;
- and
- a gate structure formed over the first fin structure and the second fin structure,
- wherein the first fin structure has a first height and the second fin structure has a second height higher than the first height, and the first fin structure has blunt corners at its top portion.
A semiconductor structure, comprising:
- a substrate;
- a first fin structure and a second fin structure formed over the substrate;
- an oxide structure formed over the first fin structure;
- an isolation structure formed adjacent to the second fin structure and covering the oxide structure;
- and
- a gate structure formed over the isolation structure and extending across the second fin structure,
- wherein the gate structure and the first fin structure are separated by the isolation structure.
Dependencies are inferred from the claim text.