Substrate processing apparatus
AssigneeTokyo Electron Limited
InventorKazuki DENPOH
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Abstract
There is provided a substrate processing apparatus which performs a film forming process by supplying a raw material gas to a substrate and irradiating plasma onto the substrate, the apparatus including: a processing container configured to hermetically accommodate a mounting table on which the substrate is mounted; and a plasma source configured to generate plasma in the processing container. The plasma source includes a high-frequency power source that generates plasma and a sheath potential reducing means configured to reduce a sheath potential of the generated plasma.
Claims7
A substrate processing apparatus which performs a film forming process by supplying a raw material gas to a substrate and irradiating plasma onto the substrate, the apparatus comprising:
- a processing container configured to hermetically accommodate a mounting table on which the substrate is mounted;
- and
- a plasma source configured to generate plasma in the processing container,
- wherein the plasma source includes:
- a high-frequency power source that generates plasma;
- and
- a sheath potential reducing means configured to reduce a sheath potential of the generated plasma.
Dependencies are inferred from the claim text.