Nonvolatile memory device including page buffer and method of operating the nonvolatile memory device
AssigneeSamsung Electronics Co., Ltd.
InventorHYUN-JUN YOON
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Abstract
A nonvolatile memory device including a page buffer and a method of operating the nonvolatile memory device, the method including performing a first sensing operation using a first sensing voltage; precharging some bit lines from among a plurality of bit lines, according to first data stored in a first latch unit of a page buffer due to the first sensing operation; resetting the first latch unit; and performing a second sensing operation using a second sensing voltage.
Claims20
A method of operating a nonvolatile memory device, the method comprising:
- performing a first sensing operation on memory cells of the nonvolatile memory device using a first sensing voltage;
- precharging some bit lines from among a plurality of bit lines connected to the memory cells, according to first data stored in a first latch unit of a page buffer due to the first sensing operation;
- resetting the first latch unit after said precharging;
- and
- performing a second sensing operation on the memory cells using a second sensing voltage.
A method of operating a nonvolatile memory device comprising a page buffer, the page buffer comprising a first latch unit connected to sensing nodes and a second latch unit electrically connected to the first latch unit, the method comprising:
- storing a result of a first sensing operation performed on a plurality of memory cells in the first latch unit, in response to a read command;
- selectively precharging some bit lines from among a plurality of bit lines connected to the plurality of memory cells according to a logic state of the first latch unit;
- after the selectively precharging, setting the first latch unit to a first logic state without dumping the result of the first sensing operation stored in the first latch unit to the second latch unit;
- and
- storing a result of a second sensing operation performed on at least some memory cells from among the plurality of memory cells in the first latch unit.
A method of operating a nonvolatile memory device comprising:
- setting a logic state of a first latch unit to a first logic state;
- precharging all of a plurality of bit lines connected to the first latch unit according to the set logic state of the first latch unit;
- after the precharging, performing a first sensing operation on memory cells connected to the plurality of bit lines using a first sensing voltage and storing a result of the first sensing operation as data in the first latch unit;
- selectively precharging some of the plurality of bit lines according to a logic state of the data stored in the first latch unit;
- after the selectively precharging, setting the logic state of the first latch unit to the first logic state;
- and
- performing a second sensing operation on the memory cells using a second sensing voltage and storing a result of the second sensing operation in the first latch unit as final data.
The method of claim 17, wherein the setting the logic state of the first latch unit after the selectively precharging is performed while the plurality of bit lines are disconnected from the first latch unit.
Dependencies are inferred from the claim text.