Magnetic storage device

A magnetic storage device comprising:

• a plurality of memory cells;
• and
• a wiring including a first ferromagnetic layer and a first nonmagnetic layer disposed on the first ferromagnetic layer,
• wherein each of the plurality of memory cells includes:
• a magnetoresistive effect element including a second ferromagnetic layer disposed on the first nonmagnetic layer, a third ferromagnetic layer, and a second nonmagnetic layer disposed between the second ferromagnetic layer and the third ferromagnetic layer;
• a first transistor having a first terminal electrically connected to the first ferromagnetic layer, and a second terminal electrically connected to a source line;
• and
• a second transistor having a first terminal electrically connected to the third ferromagnetic layer, and a second terminal electrically connected to a bit line, and
• wherein the wiring is coupled to each of the magnetoresistive effect elements.