Temperature variation compensation
AssigneeWestern Digital Technologies, Inc.
InventorsERAN SHARON, NIAN NILES YANG, IDAN ALROD, EVGENY MEKHANIK, MARK SHLICK, JOANNA LAI
Life of this patent
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Abstract
A data storage device is configured to mark data for refresh in response to determining that a first measured temperature associated with writing the data to the memory exceeds a first threshold. The data storage device is further configured to refresh the marked data in response to determining that a second measured temperature associated with the memory is below a second threshold.
Claims32
A device comprising:
- a memory;
- and
- a controller coupled to the memory, the controller configured to mark data for refresh in response to determining that a first measured temperature associated with writing the data to the memory exceeds a first threshold, the controller further configured to refresh the marked data in response to determining that a second measured temperature associated with the memory is below a second threshold.
A device comprising:
- a memory;
- and
- a controller coupled to the memory, the controller configured to write data to a block of the memory and, in response to detecting a temperature change that exceeds a block variation threshold after writing the data to the block, to close the block to additional write operations to an unused portion of the block.
A device comprising:
- a memory;
- and
- a controller coupled to the memory, the controller configured to associate first data that is stored in the memory with a first group indicator and to associate first memory access parameter values with the first group indicator, wherein in response to detecting a temperature change that exceeds a group temperature threshold associated with the first group indicator, the controller is configured to associate second data to be stored in the memory with a second group indicator and to associate second memory access parameter values with the second group indicator, the second memory access parameter values different from the first memory access parameter values.
A device comprising:
- a memory;
- and
- a controller coupled to the memory, the controller configured to store a default value of a read voltage and to determine an adjusted read voltage to read data from the memory, the adjusted read voltage determined based on the default value and based on a data structure that maps read voltage offset values to differences between write temperatures and read temperatures.
A device comprising:
- a memory;
- and
- a controller coupled to the memory, the controller configured to read multiple codewords of data from the memory and, in response to detecting an error rate exceeding a threshold error rate for a threshold number of the codewords, to initiate a temperature compensation operation that modifies one or more memory access parameters based on a temperature difference between a first temperature and a second temperature.
A device comprising:
- a memory including:
- a first memory die that includes a first temperature sensor;
- and
- a second memory die that includes a second temperature sensor;
- and
- a controller coupled to the memory, the controller configured to receive a first indicator of a first temperature from the first temperature sensor and a second indicator of a second temperature from the second temperature sensor, wherein the controller is configured to determine a temperature range based on an average of the first temperature and the second temperature.
A method comprising:
- at a data storage device that includes a controller coupled to a non-volatile memory, performing:
- marking data stored at the non-volatile memory for refresh in response to determining that a first measured temperature associated with writing the data to the non-volatile memory exceeds a first threshold;
- and
- refreshing the marked data in response to determining that a second measured temperature associated with the non-volatile memory is below a second threshold.
A method comprising:
- at a data storage device that includes a controller coupled to a non-volatile memory, performing:
- writing data to a block of the non-volatile memory;
- and
- in response to detecting a temperature change that exceeds a block variation threshold after writing the data to the block, closing the block.
A method comprising:
- at a data storage device that includes a controller coupled to a non-volatile memory, performing:
- associating first data that is stored in the non-volatile memory with a first group indicator;
- associating first memory access parameter values with the first group indicator;
- in response to detecting a temperature change that exceeds a group temperature threshold associated with the first group indicator:
- associating second data to be stored in the non-volatile memory with a second group indicator;
- and
- associating second memory access parameters with the second group indicator.
A method comprising:
- at a data storage device that includes a controller coupled to a non-volatile memory, performing:
- determining a read voltage offset value based on data structure that maps read voltage offset values to differences between write temperatures and read temperatures;
- and
- determining an adjusted value of a read voltage associated with reading data from the non-volatile memory, the adjusted value determined based on a default value of the read voltage and based on the read voltage offset value.
A method comprising:
- at a data storage device that includes a controller coupled to a non-volatile memory, performing:
- reading multiple codewords of data from the non-volatile memory;
- and
- in response to detecting an error rate exceeding a threshold error rate for a threshold number of the codewords, initiating a temperature compensation operation that modifies one or more memory access parameters based on a temperature difference between a first temperature and a second temperature.
A method comprising:
- at a data storage device that includes a controller coupled to a non-volatile memory, performing
- receiving a first indicator of a first temperature from a first temperature sensor of a first die of the non-volatile memory;
- receiving a second indicator of a second temperature from a second temperature sensor of a second die of the non-volatile memory;
- and
- determining a temperature range based on an average of the first temperature and the second temperature.
Dependencies are inferred from the claim text.