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US 2017/0255102 A1Published application
Pattern trimming compositions and methods
AssigneeRohm and Haas Electronic Materials LLC
InventorsKevin Rowell, Cong Liu, Cheng Bai Xu, Irvinder Kaur, Jong Keun Park
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Abstract
Photoresist pattern trimming compositions comprise: a polymer that is soluble in a 0.26 normality aqueous tetramethylammonium hydroxide solution; and a solvent system, wherein the solvent system comprises one or more monoether solvents in a combined amount of from 50 to 98 wt % based on the solvent system. The compositions find particular applicability in the manufacture of semiconductor devices.
Claims13
A photoresist pattern trimming composition, comprising:
- a polymer that is soluble in a 0.26 normality aqueous tetramethylammonium hydroxide solution;
- and
- a solvent system, wherein the solvent system comprises one or more monoether solvents in a combined amount of from 70 to 98 wt % based on the solvent system, and one or more alcohol and/or ester solvents in a combined amount of from 2 to 30 wt % based on the solvent system.
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11-12. (canceled)
Dependencies are inferred from the claim text.