Lithography Patterning with Flexible Solution Adjustment

A method for lithography patterning, comprising:

• providing a substrate;
• forming a first layer over the substrate, the first layer being radiation-sensitive;
• exposing the first layer to a radiation;
• applying a developer onto the exposed first layer to result in a pattern over the substrate, wherein the developer includes a developing chemical;
• and
• during the applying of the developer, adjusting a concentration of the developing chemical in the developer.

A system for lithography patterning, comprising:

• a first supply pipe for supplying a first solution;
• a second supply pipe for supplying a second solution;
• a third supply pipe coupled to the first and second supply pipes for receiving the first and second solutions respectively and mixing the first and second solutions into a mixture;
• a substrate stage for holding a substrate;
• a supply nozzle coupled to the third supply pipe for dispensing the mixture to the substrate;
• a first control unit coupled to the first supply pipe and configured to control a flow rate of the first solution going to the third supply pipe;
• and
• a second control unit coupled to the second supply pipe and configured to control a flow rate of the second solution going to the third supply pipe.