Semiconductor Structure

A method for fabricating a semiconductor structure comprising:

• providing a semiconductor substrate that is processed to comprise at least an optical aspect that comprises at least a silicon photonics device and at least an electronic aspect comprising at least an electronic device;
• forming at least an interlayer dielectric layer on the semiconductor substrate, and forming at least an electrically interconnecting layer on the interlayer dielectric layer, wherein the method further comprises:
• providing at least a functional-oxide crystalline layer in relation to the interlayer dielectric layer before the interconnecting layer is formed on the interlayer dielectric layer, the functional-oxide crystalline layer comprising a functional-oxide material and being processed to comprise at least an active optical device having at least a given electro-optical property, and in forming the interlayer dielectric layer, the interlayer dielectric layer is formed thereby to comprise at least two surfaces, a first surface and a second surface, the first surface being provided substantially adjacent with the semiconductor substrate so as to be in common to at least a respective part of the optical aspect and the electronic aspect.