Back to results
US 2017/0254839 A9Published application
Metal shunt resistor
AssigneeInfineon Technologies Austria AG
InventorsDieter DRAXELMAYR, Kofi MAKINWA, Saleh Heidary SHALMANY
Life of this patent
Estimating the term…
Abstract
In one embodiment, a shunt resistor is provided, comprising two terminals, a semiconductor substrate embodying at least one temperature sensor comprising at least a temperature sensitive element comprising at least one pn-junction, and at least two metal layers above the semiconductor substrate, at least the upper of the metal layer comprising a path that electrically connects the two terminals, whereby the temperature sensor is below and within the periphery of the upper metal layer.
Claims19
An integrated circuit, comprising:
- a semiconductor substrate including at least one temperature sensor comprising at least a temperature sensitive element,
- a shunt resistor, the shunt resistor comprising:
- two terminals and
- at least two metal layers above the semiconductor substrate, at least the upper of the metal layer comprising a path that electrically connects the two terminals,
- wherein the temperature sensor is below and within the periphery of the upper metal layer.
2 more elements
An integrated circuit, comprising:
- a semiconductor substrate including at least one temperature sensor comprising at least a temperature sensitive element,
- a shunt resistor, the shunt resistor comprising:
- two terminals and
- at least one metal layer above the semiconductor substrate, the at least one layer comprising a path that electrically connects the two terminals,
- wherein the temperature sensor is below and within the periphery of the at least one metal layer.
2 more elements
Dependencies are inferred from the claim text.