Stable P-Type Zinc Oxide and Bandgap Engineered Zinc Oxide and Other Oxide Systems

A method for producing stable zinc oxide based semiconductor materials exhibiting p-type characteristics, said method comprising the steps of:

• providing a substrate material to receive deposition of a p-type zinc oxide material;
• cleaning said substrate by removing excess oxygen from a surface of said substrate material;
• placing said substrate material in a chemical vapor deposition chamber;
• heating said substrate material;
• providing a zinc precursor, an oxygen precursor and a refractory metal precursor, each said precursor in gas form;
• providing a flow of said precursor gas, wherein said precursor gas flows across said substrate material in a measured, fixed ratio between zinc precursor, oxygen precursor and refractory metal precursor.

A method for producing stable zinc oxide based semiconductor materials exhibiting p-type characteristics, said method comprising the steps of:

• providing a substrate material to receive deposition of a p-type zinc oxide material;
• cleaning said substrate by removing excess oxygen from a surface of said substrate material;
• placing said substrate material in a chemical vapor deposition chamber;
• heating substrate;
• providing a zinc precursor, an oxygen precursor and a refractory metal precursor in gas form;
• providing a pulse flow of said zinc and oxygen precursor in a fixed ratio;
• stopping said pulse flow of zinc and oxygen precursor and subsequently providing a pulse flow of refractory metal precursor;
• alternating pulse flow of zinc and oxygen precursor with pulse flow of refractory metal precursor, wherein said precursor gases alternately flow across said substrate material in a fixed ratio between said zinc precursor, oxygen precursor and refractory metal precursor.