A method for producing monocrystalline gallium containing nitride and monocrystalline gallium containing nitride, prepared with this method

The method of claim. 1, characterized in that the acceptor dopant constitutes manganese in a molar ratio to ammonia from 0.000001 to 0.001, more preferably from 0.000005 to 0.0005, the most preferably from 0.00001 to 0.0001.

The method of claim. 1, characterized in that the acceptor dopant constitutes iron in a molar ratio to ammonia from 0.000001 to 0.01, more preferably from 0.00005 to 0.005, the most preferably from 0.0001 to 0.001.

The method of claim. 1, characterized in that the acceptor dopant constitutes vanadium in a molar ratio to ammonia from 0.000001 to 0.1, more preferably from 0.0005 to 0.05, the most preferably from 0.001 to 0.01.

The method of claim. 1, characterized in that the acceptor dopant constitutes carbon at a molar ratio to ammonia from 0.000001 to 0.1, more preferably from 0.00005 to 0.05, the most preferably from 0.0001 to 0.01.

A method according to any of the preceding claims, characterized in that the oxygen getter constitutes calcium or a rare-earth element, preferably gadolinium or yttrium, or a combination thereof.

A method according to any of the preceding claims, characterized in that the oxygen getter and acceptor dopant is introduced in the elemental form, i.e. metal or as a compound, preferably from the group comprising azides, amides, imides, amide-imides and hydrides, wherein the components are introduced separately or combined, in the case of combined introduction, mixtures of elements and compounds, intermetallic compounds or alloys are used.

A method according to any of the preceding claims, characterized in that the oxygen getter and/or acceptor dopant is introduced into the process environment with mineralizer.

A method according to any of the preceding claims, characterized in that the mineralizer contains sodium or potassium in a molar ratio to ammonia of from 0.005 to 0.5.

A method according to any of the preceding claims, characterized in that the stoichiometric gallium nitride—GaN is produced.

A method according to any of the preceding claims, characterized in that it is carried out in an autoclave having a capacity of more than 600 cm3, more preferably greater than 9000 cm3.

The monocrystalline gallium containing nitride, prepared with the method according to any of the preceding claims, comprising at least one element of Group I (IUPAC 1989) in an amount of at least 0.1 ppm, and contains oxygen in a concentration of not more than 1×1019 cm−3, preferably not more 5×1018 cm−3, and the most preferably not more than 1×1018 cm−3, characterized in that it is a highly resistive (semi-insulating) material having the resistivity greater than 1×106 Ωcm, preferably greater than 1×108 Ωcm and the most preferably greater than 1×1010 Ωcm.