Photoelectric semiconductor device

A photoelectric semiconductor device, comprising:

• a substrate;
• at least a light emitting chip arranged on the substrate;
• a converting material arranged on an optical path of the light emitting chip;
• an encapsulant covering the light emitting chip, the encapsulant has a Shore hardness higher than D50 or a moisture-permeable value of less than 10 g/m2·24 hrs;
• and
• a protective layer arranged on at least one of the substrate and the encapsulant;
• wherein the converting material comprises a first wavelength converting compound having a main peak wavelength in green spectrum and a second wavelength converting compound having a main peak wavelength in red spectrum, the first wavelength converting compound and the second wavelength converting compound are both fluorescent materials having a full width at half maximum of equal or less than 50 nm.