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US 2017/0250289 A1Published application
Thin-film transistor substrate and method of manufacturing the same
AssigneeJoled Inc.
InventorYuta SUGAWARA
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Abstract
A method of manufacturing a TFT substrate includes the steps of forming an oxide semiconductor layer above a substrate, forming a first oxide film on the oxide semiconductor layer, performing oxidation processing on the oxide semiconductor layer after formation of the first oxide film, and forming a second oxide film on the first oxide film after the oxidation processing.
Claims14
A method of manufacturing a thin-film transistor substrate, comprising:
- forming an oxide semiconductor layer above a substrate;
- forming a first oxide film on the oxide semiconductor layer;
- performing oxidation processing on the oxide semiconductor layer after formation of the first oxide film;
- and
- forming a second oxide film on the first oxide film after the oxidation processing.
2 more elements
A thin-film transistor substrate comprising:
- a substrate;
- an oxide semiconductor layer;
- a first oxide film;
- and
- a second oxide film,
- the oxide semiconductor layer, the first oxide film, and the second oxide film being sequentially laminated above the substrate,
- wherein in concentration profiles of elements in a direction of lamination,
- a concentration profile of fluorine elements shows a peak in proximity to a boundary between the first oxide film and the second oxide film,
- a concentration profile of nitric oxide shows that a concentration in proximity to the boundary is higher than a concentration in proximity to a center of the second oxide film, and
- a concentration profile of hydrogen elements discontinuously changes in proximity to the boundary.
7 more elements
Dependencies are inferred from the claim text.