Fin field effect transistor and method for fabricating the same

A method of fabricating a fin field effect transistor (FinFET), comprising:

• patterning a semiconductor substrate to form a plurality of trenches in the semiconductor substrate and at least one semiconductor fin between the trenches;
• forming a plurality of insulators in the trenches;
• forming a dummy gate stack over portions of the semiconductor fin and over portions of the insulators to expose source/drain regions of the semiconductor fin, wherein the dummy gate stack comprises a dummy gate, a dummy gate dielectric layer, and a plurality of spacers;
• forming a strained material over the source/drain regions of the semiconductor fin;
• removing the dummy gate and the dummy gate dielectric layer to expose a channel region of the semiconductor fin;
• removing a portion of the channel region of the semiconductor fin;
• and
• forming a gate dielectric material and a gate material over the channel region of the semiconductor fin to form a gate stack.

A fin field effect transistor (FinFET), comprising:

• a semiconductor substrate comprising at least one semiconductor fin thereon, wherein the semiconductor fin comprises source/drain regions and a channel region, and a width of the source/drain regions is larger than a width of the channel region;
• a plurality of insulators disposed on the semiconductor substrate, the semiconductor fin being sandwiched by the insulators;
• a gate stack over the channel region of the semiconductor fin and over portions of the insulators;
• and
• a strained material covering the source/drain regions of the semiconductor fin.