Semiconductor device with buried conductive region, and method for manufacturing the semiconductor device

A method for manufacturing an electronic device, comprising:

• forming a buried cavity in a semiconductor body;
• forming an active region, including an electronic component, in the semiconductor body above the buried cavity;
• forming a passive region, surrounding the active region, in the semiconductor body;
• etching selective portions of the semiconductor body at the passive region to form one or more openings in fluidic connection with the buried cavity;
• depositing metallic material within the buried cavity through the one or more openings, completely coating internal walls of the buried cavity and forming a metallic buried region, and completely coating internal walls of the one or more openings to form one or more paths for electrical access to the conductive buried region.

A semiconductor device comprising:

• a semiconductor body including an active region and a buried aperture below the active region;
• an electronic component in the active region;
• a conductive buried region, of metallic material, which coats internal walls of the buried aperture in the semiconductor body;
• and
• a metallic contact extending between the conductive buried region and a top surface of the semiconductor body and forms a path for electrical access to the conductive buried region.