Imaging device

An imaging device comprising a unit pixel cell including:

• a semiconductor substrate having a surface including a first area and a second area surrounded by the first area, the semiconductor substrate including
• a first region of a first conductivity type, the first region being exposed to the surface in the first area, and
• a second region of a second conductivity type different from the first conductivity type, the second region being directly adjacent to the first region and being exposed to the surface in the second area;
• a photoelectric converter above the surface of the semiconductor substrate;
• a contact plug between the surface of the semiconductor substrate and the photoelectric converter, the contact plug being connected to the second region;
• a first transistor including
• the second region as one of a source and a drain,
• a first electrode covering a first portion of the first area, and
• a first insulation layer between the first electrode and the semiconductor substrate;
• a second electrode covering a second portion of the first area, the second portion being different from the first portion;
• and
• a second insulation layer between the second electrode and the semiconductor substrate, wherein
• when seen in a direction perpendicular to the surface of the semiconductor substrate, a contact between the second region and the contact plug is located between the first electrode and the second electrode.