Semiconductor package and method of forming the same

A method comprising:

• forming a first through via adjacent a first die, two sidewalls of the first die meeting in a first corner region;
• at least laterally encapsulating the first die and the first through via in a molding compound;
• forming a first redistribution structure over and electrically coupled to the first die and the first through via, the first redistribution structure comprising a first metallization pattern, the first metallization pattern overlying the first corner region extending in directions that have a first angle relative to one of the sidewalls of the first die, the first angle being in a range from 75 degrees to 105 degrees;
• and
• forming a first set of conductive connectors over and electrically coupled to the first redistribution structure.

A method comprising:

• forming a first package comprising:
• forming an electrical connector over a carrier substrate;
• attaching a first die to the carrier substrate, the electrical connector extending from a second side of the first die to a first side of the first die, the second side being opposite the first side, the electrical connector being adjacent the first die, the first side of the first die having a first center point;
• encapsulating the first die and the electrical connector with a molding compound;
• and
• forming a redistribution structure overlying the first side of the first die and the molding compound, the redistribution structure comprising a first portion of metallization patterns extending over a first portion of a boundary of the first die to the molding compound, the first portion of the metallization patterns not extending parallel to a first line, the first line extending from the first center point of the first die to the first portion of the boundary of the first die.

A method comprising:

• forming a first electrical connector adjacent a first die, the first die having an active surface with a first center point;
• laterally encapsulating the first die and the first electrical connector in a molding compound;
• and
• forming a first redistribution structure over the molding compound and over and electrically coupled to the active surface of the first die and to the first electrical connector, the first redistribution structure comprising a first redistribution layer (RDL) comprising metallization patterns extending over the first die and the molding compound, a first portion of the metallization patterns of the first RDL extending over a first portion of a boundary of the first die to the molding compound, the first portion of the metallization patterns not extending parallel to a first line, the first line extending from the first center point of the first die to the first portion of the boundary of the first die.