Semiconductor device
AssigneeSii Semiconductor Corporation
InventorYuichiro KITAJIMA
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Abstract
Provided is a semiconductor device in which a fuse element, which is cuttable by a laser, can be stably cut. The fuse element includes an upper fuse element, a lower fuse wiring line, and a fuse connecting contact such that, in cutting the fuse element by a laser, the lower fuse wiring line is protected by an inter-layer film, and only the upper fuse element is efficiently melted and evaporated. In addition, the contact for connecting the upper fuse element and the lower fuse wiring line to each other is formed at a center of a laser irradiation region, and hence the connection portion receives the energy of the laser most efficiently.
Claims8
A semiconductor device, comprising:
- a semiconductor substrate;
- a first inter-layer insulating film formed on a surface of the semiconductor substrate;
- a lower fuse wiring line formed on the first inter-layer insulating film;
- an inter-fuse insulating film formed on the lower fuse wiring line;
- an upper fuse element, which is formed on the inter-fuse insulating film, and has a laser irradiation region and an upper fuse wiring portion;
- a fuse connecting contact formed in the inter-fuse insulating film, for connecting the lower fuse wiring line and the upper fuse element to each other;
- and
- a second inter-layer insulating film formed on the inter-fuse insulating film,
- the laser irradiation region having a circular shape,
- the fuse connecting contact being formed at a center of the laser irradiation region.
Dependencies are inferred from the claim text.